NTB30N06 データシートの表示（PDF） - ON Semiconductor
部品番号
コンポーネント説明
メーカー
NTB30N06 Datasheet PDF : 7 Pages
| |||
NTP30N06, NTB30N06
2400
2000
VDS = 0 V
1600 Ciss
VGS = 0 V
TJ = 25°C
1200
Crss
800
Ciss
400
Coss
Crss
0
10
5 VGS 0 VDS 5
10
15
20
25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
1000
VDS = 30 V
ID = 30 A
VGS = 10 V
100
tr
tf
td(off)
10
td(on)
12
10
8
Q1
6
QT
Q2
VGS
4
2
ID = 30 A
TJ = 25°C
0
0
4
8
12
16
20
24
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
32
VGS = 0 V
TJ = 25°C
24
16
8
1
1
10
100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
1000
100
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
10 ms
1 ms 100 ms
1
0.1
0.1
RDS(on) Limit
Thermal Limit
Package Limit
1
10 ms
dc
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0
0.6 0.68 0.76 0.84 0.92 1 1.08 1.16
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus
Current
120
ID = 26 A
100
80
60
40
20
0
25
50
75
100
125
150
175
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
http://onsemi.com
4
Share Link: 