NTD20N03L27(2011) データシートの表示（PDF） - ON Semiconductor
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NTD20N03L27 Datasheet PDF : 5 Pages
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NTD20N03L27,
NVD20N03L27
Power MOSFET
20 Amps, 30 Volts, N−Channel DPAK
This logic level vertical power MOSFET is a general purpose part
that provides the “best of design” available today in a low cost power
package. Avalanche energy issues make this part an ideal design in.
The drain−to−source diode has a ideal fast but soft recovery.
Features
• Ultra−Low RDS(on), Single Base, Advanced Technology
• SPICE Parameters Available
• Diode is Characterized for use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperatures
• High Avalanche Energy Specified
• ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
• AEC Q101 Qualified − NVD20N03L27
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Power Supplies
• Inductive Loads
• PWM Motor Controls
• Replaces MTD20N03L in many Applications
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MW)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25_C
− Continuous @ TA = 100_C
− Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25_C
Derate above 25°C
Total Power Dissipation @ TC = 25°C (Note 1)
Operating and Storage Temperature Range
VDSS
30
Vdc
VDGR
30
Vdc
Vdc
VGS
"20
VGS
"24
ID
ID
IDM
PD
TJ, Tstg
20
16
60
74
0.6
1.75
−55 to
150
Adc
Apk
W
W/°CW
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5 Vdc, L = 1.0 mH,
IL(pk) = 24 A, VDS = 34 Vdc)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
EAS
RqJC
RqJA
RqJA
TL
288
mJ
°C/W
1.67
100
71.4
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size and repetitive rating; pulse width limited by maximum junction
temperature.
© Semiconductor Components Industries, LLC, 2011
1
October, 2011 − Rev. 5
http://onsemi.com
20 A, 30 V, RDS(on) = 27 mW
N−Channel
D
G
S
MARKING
DIAGRAMS
4
12
3
DPAK
CASE 369C
STYLE 2
4
Drain
1
Gate
2
Drain
3
Source
20N3L = Device Code
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NTD20N03L27/D
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