2SB1389 データシートの表示（PDF） - Inchange Semiconductor

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2SB1389

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1389

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=-100μA; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-50mA; IC=0

VCEsat-1 Collector-emitter saturation voltage IC=-2A ;IB=-4mA

VCEsat-2 Collector-emitter saturation voltage IC=-4A ;IB=-40mA

VBEsat-1 Base-emitter saturation voltage

IC=-2A ;IB=-4mA

VBEsat-2 Base-emitter saturation voltage

IC=-4A ;IB=-40mA

ICBO

Collector cut-off current

ICEO

Collector cut-off current

VCB=-50V; IE=0

VCE=-50V; RBE=∞

hFE

DC current gain

IC=-2A ; VCE=-3V

VD

Diode forward voltage

ID=4A

MIN TYP. MAX UNIT

-60

V

-60

V

-7

V

-1.5

V

-3.0

V

-2.0

V

-3.5

V

-10

μA

-10

μA

1000

20000

3.0

V

2

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