2SB776 データシートの表示（PDF） - Unspecified

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2SB776

TRANSISTOR (PNP)

Unspecified 

2SB776 TRANSISTOR (PNP)

FEATURES

z High current output up to 3A

z Low saturation voltage Power dissipation

MAXIMUM RATINGS (TA=25℃ unless otherwise noted )

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-50

V

VCEO

Collector-Emitter Voltage

-50

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current –Continuous

-3

A

PC

Collector Power Dissipation

1

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

TO-126

1. EMITTER

2. COLLECTOR

3. BASE

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

MIN TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO IC=-100µA,IE=0

-50

V

Collector-emitter breakdown voltage

V(BR)CEO IC=-5mA,IB=0

-50

V

Emitter-base breakdown voltage

V(BR)EBO IE=-100µA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-50V,IE=0

-1

µA

Emitter cut-off current

IEBO

VEB=-3V,IC=0

-1

µA

DC current gain

hFE(1)

hFE(2)

VCE=-2V,IC=-20mA

VCE=-2V,IC=-1A

100

100

400

Collector-emitter saturation voltage

VCE(sat) IC=-2A,IB=-200mA

-0.5

V

Base-emitter saturation voltage

VBE(sat) IC=-2A,IB=-200mA

-2

V

Transition frequency

fT

VCE=-5V,IC=-100mA

80

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

45

pF

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