RB451F(2011) データシートの表示（PDF） - ROHM Semiconductor

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RB451F
(Rev.:2011)

Schottky Barrier Diode

ROHM Semiconductor 

Schottky Barrier Diode

RB451F

Applications

Low current rectification

Features

1) Small mold type. (UMD3)

2) Low VF

3) High reliability.

Construction

Silicon epitaxial planer

Dimensions (Unit : mm)

2. 0±0. 2

0 .3± 0.1

各Eリa同cーh寸ドle法aとd hもas same dimensions

(3)

0 .15± 0.05

(2)

(1 )

（0.65） （0.65）

1.3 ±0. 1

0 ～0. 1

0 .7± 0.1

0 .9± 0.1

ROHM : UMD3

JEDEC : SOT-323

JEITA : SC-70

dot (year week factory)

Taping specifications (Unit : mm)

4.0±0.1

2.0 ±0.0 5

φ 1.55 ±0.0 5

Data Sheet

Land size figure (Unit : mm)

1.3

0.65

0.8MIN

UMD3

Structure

0.3±0.1

2.2 5±0.1

　　　　 0

4 .0±0 .1

φ0.5 ±0.0 5

1.25±0 .1

Absolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current

VRM

40

V

VR

40

V

Io

100

mA

Forward current surge peak (60Hz・1cyc)

IFSM

1

A

Junction temperature

Tj

125

°C

Storage temperature

Tstg

40 to 125

°C

Electrical characteristics (Ta=25°C)

Parameter

Forward voltage

Reverse current

Capacitance between terminals

Symbol Min. Typ. Max.

VF1

-

-

0.55

VF2

-

-

0.34

IR

-

-

30

Ct

-

6.0

-

Unit

Conditions

V

IF=100mA

V

IF=10mA

μA

VR=10V

pF

VR=10V , f=1MHz

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© 2011 ROHM Co., Ltd. All rights reserved.

1/3

2011.04 - Rev.B

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