RB451F(2011) データシートの表示（PDF） - ROHM Semiconductor
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RB451F Datasheet PDF : 4 Pages
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RB451F
Data Sheet
100
Ta=125℃
10 Ta=75℃
1
0.1
Ta=25℃
Ta=-25℃
0.01
0
100 200 300 400 500 600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
10000
1000
100
10
1
0.1
0.01
0
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
5 10 15 20 25 30 35
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
100
f=1MHz
10
1
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
470
Ta=25℃
IF=100mA
460
n=30pcs
450
440
430
AVE:439.5mV
420
VF DISPERSION MAP
310
Ta=25℃
IF=10mA
300
n=30pcs
290
280
270
AVE:281.5mV
260
VF DISPERSION MAP
30
Ta=25℃
25
VR=10V
n=10pcs
20
15
10
AVE:0.928uA
5
0
IR DISPERSION MAP
20
18
Ta=25℃
16
f=1MHz
VR=10V
14
n=10pcs
12
10
8
6
4
2
AVE:5.81pF
0
Ct DISPERSION MAP
20
Ifsm
1cyc
15
8.3ms
10
5
AVE:5.50A
0
IFSM DISRESION MAP
30
Ta=25℃
25
IF=0.5A
IR=1A
20
Irr=0.25*IR
n=10pcs
15
10
5
AVE:6.20nS
0
trr DISPERSION MAP
15
Ifsm
10
8.3ms 8.3ms
1cyc
5
0
0.1
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
15
1000
Rth(j-a)
Ifsm
t
10
100
Rth(j-c)
Mounted on epoxy board
IM=10mA
IF=100mA
5
10
1ms time
300us
0
0.1
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1
0.001
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
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2011.04 - Rev.B
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