2N5738 データシートの表示（PDF） - New Jersey Semiconductor
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2N5738 Datasheet PDF : 2 Pages
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£s
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistors
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N5738
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(sus)=-100V(Min.)
• Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Max.)@ lc= -5A
• Wide Area of Safe Operation
APPLICATIONS
• Designed for general-purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25 C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-20
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=100'C
Tj
Junction Temperature
-4
A
50
W
150
•c
Tslg
Storage Temperature
-65-200 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rthj-a Thermal Resistance, Junction to Ambient
MAX
0.5
UNIT
°c/w
3
I
PIN 1. BASE
Y^
2. EMITTER
TV
3. COLLECT OR (CASE)
'
TO-3 package
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1-E
1 N ^j
i•
[C
-*4U-D a PL
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I1MI1
DIM MM K/0(
A
3900
B 2530 26 6?
C 7.80 8.30
D 030 1 10
E
1 .40 160.
G
10.92
H
5.4S
K 11-40 13 50
L 1675 17 OS
N 19.40 19 62
Q 400 4 2<L
V 30.Q9 3° 20
V
430 J_52
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductorsencourages customers to verify that datasheets are current before placing orders.
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