2N5598 データシートの表示（PDF） - New Jersey Semiconductor
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2N5598 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VoEO(SUS) Collector-Emitter Sustaining Voltage lc= 50mA ; IB= 0
VcE(sat)
Collector-Emitter Saturation Voltage lc= 1A; IB= 0.1A
VeE(on) Base-Emitter On Voltage
IC=1A;VCE=5V
ICEO
Collector Cutoff Current
VCE= 60V; IB= 0
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB= 80V; |E= 0
*
VEB= 5V; lc=0
HFE
DC Current Gain
lc=1A;VCE=5V
fr
Current-Gain—Bandwidth Product lc=0.5A;VCE=10V
2N5598
MIN MAX UNIT
60
V
1.0
V
1.5
V
1.0
mA
0.1
mA
0.1
mA
70
200
60
MHz
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