2N4220 データシートの表示（PDF） - InterFET

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2N4220

N-Channel Silicon Junction Field-Effect Transistor

InterFET  

B-10

01/99

2N4220, 2N4220A, 2N4221, 2N4221A, 2N4222, 2N4222A

N-Channel Silicon Junction Field-Effect Transistor

¥ Mixers

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¥ VHF Amplifiers

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Absolute maximum ratings at TA = 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage

Continuous Forward Gate Current

Continuous Device Power Dissipation

Power Derating (to 150 °C)

– 30 V

10 mA

300 mW

2 mW/°C

At 25°C free air temperature:

Static Electrical Characteristics

Gate Source Breakdown Voltage

Gate Reverse Current

V(BR)GSS

IGSS

Gate Source Voltage

VGS

Gate Source Cutoff Voltage

Drain Saturation Current (Pulsed)

Dynamic Electrical Characteristics

VGS(OFF)

IDSS

Common Source Forward

Transconductance

Common Source Forward Transmittance

Common Source Output Conductance

Common Source Input Capacitance

Common Source Reverse

Transfer Capacitance

gfs

| Yfs |

gos

Ciss

Crss

Noise Figure

2N4220A, 2N4221A, 2N4222A

NF

2N4220

2N4220A

NJ16

2N4221

2N4221A

NJ16

2N4222

2N4222A

NJ32

Min Max Min Max Min Max Unit

– 30

– 30

– 30

V

– 0.1

– 0.1

– 0.1 nA

– 0.1

– 0.1

– 0.1 µA

– 0.5 – 2.5 – 1 – 5 – 2 – 6 V

(50) (50) (200) (200) (500) (500) µA

–4

–6

–8 V

0.5 3 2 6 5 15 mA

1000 4000 2000 5000 2500 6000 µS

750

750

750

µS

10

20

40 µS

6

6

6 pF

2

2

2 pF

2.5

2.5

2.5 dB

Process

Test Conditions

IG = – 1µA, VDS = ØV

VGS = – 15V, VDS = ØV

VGS = – 15V, VDS = ØV

TA = 150°C

VDS = 15V, ID = ( )

VDS = 15V, ID = 0.1 nA

VDS = 15V, VGS = ØV

VDS = 15V, VGS = ØV

VDS = 15V, VGS = ØV

VDS = 15V, VGS = ØV

VDS = 15V, VGS = ØV

VDS = 15V, VGS = ØV

VDS = 15V, VGS = ØV

RG = 1 MΩ

f = 1 kHz

f = 100 MHz

f = 1 kHz

f = 1 MHz

f = 1 MHz

f = 100 MHz

TOÐ72 Package

Dimensions in Inches (mm)

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

Pin Configuration

1 Source, 2 Drain, 3 Gate, 4 Case

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