C35H データシートの表示（PDF） - New Jersey Semiconductor

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C35H

C35 SERIES

New Jersey Semiconductor 

ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise noted.)

Characteristic

•Peak Forward Blocking Current

(Vp = R«ed VDRVI @ TC = + 125°C)

(VD = Rated VDRM @ TC = 125°C) •

C35U.FAG

C35B

C35H

C35C

C35D

C35E

C35M

C35S

C35N

All Devices

Peak Reverse Blocking Current

IVR = Rated VRRM @ TC = +125°C)

(Vp f Rated VRRM @ Tc = 125°C)

C35U.FAG

C35B

C35H

C36C

C35D

C35E

C35M

C35S

C35N

All Devices

Peak On-Stata Voltage

HTM = 50.3 A peak, Pulse Width £ 1 ms. Duty Cycle « 2%)

Gate Trigger Current, Continuous dc

. (VD = 12vdc, RL = so ni

(VD = 12 vdc, RL = 50n, TC = -65°o

Gate Trigger Voltage, Continuous dc

(Vp = 12 vdc, RL = so n, TC = -es-c to + i25°ci

<VD - Rated VDRM, RL = 1000 n, TC = 125°C)

Holding Current

(VD = 24 Vdc, Gate Supply = 10 V, 20 n,

45 fjs minimum pulse width. If = 0.5 A)

Critical Rate of Rise of Forward Blocking Voltage

<VD = Rated VDRM, TC = +12B°C)

C35U,F,M,S,N

C35A,G,B,H

C35C,D,E

Symbol

IDRM

or

!RRM

IDRMIAV)

or

IRRM(AV)

VTIM

IGT

VGT

IH

dv/dt

Min

Typ

Mix

Unit

mA

13

12

11

10

—

8

6

—

5

4.5

4

10

MA

mA

6.5

6

5.5

—

5

[

4

3

2.5

2.25

2

10

MA

—

—

2

Volts

mA

—

6

40

80

—

0.25

Volts

3

~~

"

100

mA

V//1S

10

20

—

—

25

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