APTDF200H120G データシートの表示（PDF） - Microsemi Corporation
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APTDF200H120G Datasheet PDF : 4 Pages
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APTDF200H120G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
VF Diode Forward Voltage
IRM Maximum Reverse Leakage Current
CT Junction Capacitance
Test Conditions
Min Typ Max Unit
IF = 200A
IF = 300A
IF = 200A
Tj = 125°C
2.4 3.0
2.7
V
1.8
VR = 1200V
Tj = 25°C
Tj = 125°C
150 µA
600
VR = 1200V
220
pF
Dynamic Characteristics
Symbol Characteristic
trr Reverse Recovery Time
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
Test Conditions
Min Typ Max Unit
IF=1A,VR=30V
di/dt = 200A/µs
Tj = 25°C
45
ns
Tj = 25°C
385
ns
Tj = 125°C
480
IF = 200A
VR = 800V
Tj = 25°C
2.1
µC
di/dt = 400A/µs Tj = 125°C
10.5
Tj = 25°C
12
A
Tj = 125°C
38
IF = 200A
210
ns
VR = 800V Tj = 125°C
19
µC
di/dt=2000A/µs
140
A
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TST G
TC
Torque
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
M6
For terminals
M5
Wt Package Weight
Min Typ Max Unit
0.285 °C/W
2500
V
-40
175
-40
125 °C
-40
100
3
2
5
3.5
N.m
280 g
www.microsemi.com
2-4
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