BFY50 データシートの表示（PDF） - TT Electronics.
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BFY50 Datasheet PDF : 3 Pages
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SILICON
NPN TRANSISTOR
BFY50
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CEO(1)
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
IC = 10mA
IC = 10µA
IE = 10µA
VCB = 60V
IB = 0
IE = 0
IC = 0
IE = 0
TA = 100°C
IEBO
Emitter Cut-Off Current
VEB = 5V
IC = 0
TA = 100°C
hFE(1)
Forward-current transfer
ratio
IC = 10mA
IC = 150mA
IC = 1.0A
VCE = 6V
VCE = 6V
VCE = 6V
VCE(sat)(1)
VBE(sat)(1)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
IC = 150mA
IC = 1.0A
IC = 1.0A
IB = 15mA
IB = 100mA
IB = 100mA
DYNAMIC CHARACTERISTICS
hfe
Small-Signal Current Gain
fT
Transition Frequency
Cobo
Output Capacitance
IC = 1.0mA
f = 1.0KHz
IC = 50mA
f = 20MHz
VCB = 12V
f = 1.0MHz
Notes
(1) Pulse Width ≤ 380us, δ ≤ 2%
VCE = 6V
VCE = 6V
IE = 0
Min. Typ Max. Units
35
80
V
6
50
nA
2.5
µA
50
nA
2.8
µA
20
30
15
0.2
1.0
V
2
10
60
MHz
12
pF
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 3085
Website: http://www.semelab-tt.com
Issue 2
Page 2 of 3
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