ST3010 データシートの表示（PDF） - Sangdest Microelectronic (Nanjing) Co., Ltd
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ST3010 Datasheet PDF : 6 Pages
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SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1046, Rev. A
Electrical Characteristics:
Characteristics
Forward Voltage Drop*
Reverse Current (per
leg)*
Junction Capacitance
(per leg)
Voltage Rate of Change
* Pulse Width < 300µs, Duty Cycle <2%
Symbol
VF1
VF2
IR1
IR2
CT
dv/dt
Condition
@ 30A, Pulse, TJ = 25 °C
@ 30A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
-
ST30100
STB30100
STF30100
Green Products
Max.
0.75
0.70
1
75
1000
10,000
Units
V
V
mA
mA
pF
V/µs
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Maximum Thermal
Resistance Junction to
Case(per leg)*
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJC
wt
ST30100
STB30100
-55 to +150
-55 to +150
STF30100
2.0
2.0
5.0
1.8
1.85
1.8
TO-220AC/ D2PAK / ITO-220AC
Units
°C
°C
°C/W
g
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