IRF6616TR1PBF データシートの表示（PDF） - International Rectifier
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IRF6616TR1PBF Datasheet PDF : 10 Pages
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IRF6616PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/∆TJ
RDS(on)
Drain-to-Source Breakdown Voltage
40
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
VGS(th)
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
75
Qg
Total Gate Charge
–––
Qgs1
Pre-Vth Gate-to-Source Charge
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
Qgd
Gate-to-Drain Charge
–––
Qgodr
Gate Charge Overdrive
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
Qoss
Output Charge
–––
RG
Gate Resistance
–––
td(on)
Turn-On Delay Time
–––
tr
Rise Time
–––
td(off)
Turn-Off Delay Time
–––
tf
Fall Time
–––
Ciss
Input Capacitance
–––
Coss
Output Capacitance
–––
Crss
Reverse Transfer Capacitance
–––
Diode Characteristics
Parameter
Min.
IS
Continuous Source Current
–––
(Body Diode)
ISM
Ãd Pulsed Source Current
(Body Diode)
–––
VSD
Diode Forward Voltage
–––
trr
Reverse Recovery Time
–––
Qrr
Reverse Recovery Charge
–––
Typ.
–––
37
3.7
4.6
1.8
-5.5
–––
–––
–––
–––
–––
29
8.6
2.4
9.4
8.6
12
15
1.3
15
19
21
4.4
3765
560
285
Typ.
–––
–––
0.8
15
33
Max.
–––
–––
5.0
6.2
2.25
–––
1.0
150
100
-100
–––
44
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 19A
VGS = 4.5V, ID = 15A
V VDS = VGS, ID = 250µA
mV/°C
µA VDS = 32V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 20V, ID = 15A
VDS = 20V
nC VGS = 4.5V
ID = 15A
See Fig. 15
nC VDS = 16V, VGS = 0V
à Ω
VDD = 16V, VGS = 4.5V
ID = 15A
ns Clamped Inductive Load
VGS = 0V
pF VDS = 20V
ƒ = 1.0MHz
Max.
110
150
1.0
23
50
Units
Conditions
MOSFET symbol
A showing the
integral reverse
V
p-n junction diode.
TJ = 25°C, IS = 15A, VGS = 0V
ns TJ = 25°C, IF = 15A
nC di/dt = 500A/µs
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by max. junction temperature.
2
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