BUK9212-55B データシートの表示（PDF） - NXP Semiconductors.
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BUK9212-55B Datasheet PDF : 13 Pages
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NXP Semiconductors
BUK9212-55B
N-channel TrenchMOS logic level FET
103
ID
(A)
102
Limit RDSon = VDS/ID
Capped at 75 A due to package
10
DC
1
1
10
03no94
tp = 10 μ s
100 μ s
1 ms
10 ms
100 ms
102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see Figure 4
Min Typ Max Unit
-
-
0.95 K/W
-
71.4 -
K/W
1
δ = 0.5
Zth(j-mb)
(K/W) 0.2
0.1
10−1
0.05
0.02
03nk52
10−2
single shot
P
tp
δ=
T
10−3
10−6
10−5
10−4
10−3
10−2
tp
t
T
10−1
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9212-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 3 February 2011
© NXP B.V. 2011. All rights reserved.
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