PSMN005-30K データシートの表示（PDF） - NXP Semiconductors.
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PSMN005-30K Datasheet PDF : 12 Pages
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PSMN005-30K
N-channel TrenchMOS SiliconMAX logic level FET
Rev. 01 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
SiliconMAX logic level N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
Computer motherboards
DC-to-DC convertors
Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C
ID
drain current
Tsp = 80 °C; VGS = 10 V;
see Figure 1
-
-
30 V
-
-
20 A
Ptot
total power
dissipation
Tsp = 80 °C; see Figure 2
-
-
3.5 W
Dynamic characteristics
QGD
gate-drain charge VGS = 4.5 V; ID = 20 A;
VDS = 15 V; Tj = 25 °C;
see Figure 12
-
14 -
nC
Static characteristics
RDSon drain-source
VGS = 10 V; ID = 15 A;
-
on-state resistance Tj = 25 °C; see Figure 10 and 11
4.4 5.5 mΩ
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