2SA1261-Z データシートの表示（PDF） - Inchange Semiconductor
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2SA1261-Z Datasheet PDF : 2 Pages
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1261-Z
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -5.0A; IB= -0.5A, L=1mH
VCEX(SUS)-1
VCEX(SUS)-2
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
IC= -5.0A ; IB1=-IB2= -0.5A,
VBE(OFF)=5.0V, L=180μH,clamped
IC= -10A ; IB1= -1.0A; IB2= -0.5A,
VBE(OFF)= 5.0V, L= 180μH,clamped
VCE(sat)* Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A
VBE(sat)* Base-Emitter Saturation Voltage
IC= -5.0A; IB= -0.5A
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
ICER
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= -100V; RBE= 51Ω,Ta=125℃
VCE= -100V; VBE(off)= -1.5V
VCE= -100V; VBE(off)= -1.5V, Ta=125℃
VEB= -5V; IC= 0
hFE-1*
DC Current Gain
IC= -0.5A; VCE= -5V
hFE-2*
DC Current Gain
IC= -3.0A; VCE= -5V
hFE-3*
DC Current Gain
IC= -5.0A; VCE= -5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
*:PW≤350us,duty cycle≤2%
IC= -5.0A, RL= 10Ω,
IB1= -IB2= -0.5A, VCC≈-50V
hFE-2 Classifications
M
L
K
40-80 60-120 100-200
MIN MAX UNIT
-100
V
-100
V
-100
V
-0.6
V
-1.5
V
-10
μA
-1.0
mA
-10
μA
-1.0
mA
-10
μA
40
200
40
200
20
0.5
μs
1.5
μs
0.5
μs
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