MJD117 データシートの表示（PDF） - Unspecified

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MJD117

TRANSISTOR (PNP)

Unspecified 

SEMICONDUCTOR

TECHNICAL DATA

MJD117

MJD117 TRANSISTOR (PNP)

TO-252-2L

FEATURES

High DC Current Gain

MAXIMUM RATINGS (Ta=25 unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

-100

-100

-5

-2

1.75

72

150

-55~+150

1. BASE

2. COLLECTOR

3. EMITTER

Unit

V

V

V

A

W

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

Collector output capacitance

Transition frequency

*Pulse test

Symbol

V(BR)CBO

V(BR)CEO*

V(BR)EBO

ICBO

ICEX

IEBO

hFE(1)*

hFE(2)*

hFE(3)*

VCE(sat)*

VBE(sat)*

VBE*

Cob

fT

Test conditions

IC=-1mA,IE=0

IC=-30mA,IB=0

IE=-5mA,IC=0

VCB=-80V,IE=0

VCE=-80V, VBE(off)=-1.5V

VEB=-5V,IC=0

VCE=-3V, IC=-0.5A

VCE=-3V, IC=-2A

VCE=-3V, IC=-4A

IC=-2A,IB=-8mA

IC=-4A,IB=-40mA

IC=-4A,IB=-40mA

VCE=-3V, IC=-2A

VCB=-10V,IE=0, f=0.1MHz

VCE=-10V,IC=-0.75A, f=1MHz

Min

-100

-100

-5

500

1000

200

25

Typ Max Unit

V

V

V

-10

μA

-10

μA

-2

mA

12000

-2

V

-3

V

-4

V

-2.8

V

200 pF

MHz

2018. 02. 19

Revision No : 0

1/3

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