PMK30EP データシートの表示（PDF） - Nexperia B.V. All rights reserved
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PMK30EP Datasheet PDF : 13 Pages
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Nexperia
120
Ider
(%)
80
003aab618
PMK30EP
P-channel TrenchMOS extremely low level FET
120
Pder
(%)
80
003aab948
40
40
0
0
50
100
150
200
Tj (°C)
0
0
50
100
150
200
Tsp (°C)
Fig 1. Normalized continuous drain current as a
function of solder point temperature
−102
ID
(A)
−10
Limit RDSon = VDS/ID
−1
Fig 2. Normalized total power dissipation as a
function of solder point temperature
003aab616
tp = 10 μs
1 ms
10 ms
DC
100 ms
−10−1
−10−1
−1
−10
−102
VDS (V)
Tsp = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PMK30EP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 25 October 2010
© Nexperia B.V. 2017. All rights reserved
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