BUK9505-30A データシートの表示（PDF） - Nexperia B.V. All rights reserved

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BUK9505-30A

N-channel TrenchMOS logic level FET

Nexperia B.V. All rights reserved 

BUK9505-30A

N-channel TrenchMOS logic level FET

Rev. 3 — 20 April 2011

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

„ AEC Q101 compliant

„ Low conduction losses due to low

on-state resistance

1.3 Applications

„ Automotive and general purpose

power switching

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

VDS

drain-source voltage

ID

drain current

Ptot

total power dissipation

Static characteristics

Tj ≥ 25 °C; Tj ≤ 175 °C

Tmb = 25 °C

RDSon

drain-source on-state

resistance

Avalanche ruggedness

VGS = 5 V; ID = 25 A;

Tj = 25 °C

VGS = 10 V; ID = 25 A;

Tj = 25 °C

EDS(AL)S

non-repetitive

ID = 75 A; Vsup ≤ 25 V;

drain-source avalanche RGS = 50 Ω; VGS = 5 V;

energy

Tj(init) = 25 °C; unclamped

Min Typ Max Unit

-

-

30 V

-

-

75 A

-

-

230 W

- 4.3 5 mΩ

- 3.9 4.6 mΩ

-

-

500 mJ

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