DS1330WP-100IND データシートの表示（PDF） - Dallas Semiconductor -> Maxim Integrated

部品番号

コンポーネント説明

メーカー

DS1330WP-100IND

3.3V 256k Nonvolatile SRAM with Battery Monitor

Dallas Semiconductor -> Maxim Integrated 

ABSOLUTE MAXIMUM RATINGS*

Voltage On Any Pin Relative To Ground

Operating Temperature

Storage Temperature

Soldering Temperature

DS1330W

-0.3V to +4.6V

0°C to 70°C, -40°C to +85°C for IND parts

-40°C to +70°C, -40°C to +85°C for IND parts

See IPC/JEDEC J-STD-020

* This is a stress rating only and functional operation of the device at these or any other conditions above

those indicated in the operation sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods of time may affect reliability.

RECOMMENDED DC OPERATING CONDITIONS

PARAMETER

SYMBOL MIN

TYP

Power Supply Voltage

Logic 1

Logic 0

VCC

3.0

3.3

VIH

2.2

VIL

0.0

MAX

3.6

VCC

0.4

(TA: See Note 10)

UNITS NOTES

V

V

V

DC ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL MIN

Input Leakage Current

IIL

-1.0

I/O Leakage Current CE ³

VIH £ VCC

IIO

-1.0

Output Current @ 2.2V

IOH

-1.0

Output Current @ 0.4V

IOL

2.0

Standby Current CE = 2.2V

ICCS1

Standby Current CE = VCC -

0.2V

ICCS2

Operating Current

ICCO1

Write Protection Voltage

VTP

2.8

(TA: See Note 10) (VCC=3.3V ±0.3V)

TYP MAX UNITS NOTES

+1.0

µA

+1.0

µA

mA

14

mA

14

50

250

µA

30

150

µA

50

mA

2.9

3.0

V

CAPACITANCE

PARAMETER

Input Capacitance

Input/Output Capacitance

SYMBOL

CIN

CI/O

MIN

(TA= 25°C)

TYP MAX UNITS NOTES

5

10

pF

5

10

pF

4 of 12

Share Link: