EN29F08050S データシートの表示（PDF） - Eon Silicon Solution Inc.

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EN29F08050S

8 Megabit (1024K x 8-bit) Flash Memory

Eon Silicon Solution Inc. 

EN29F080

Low VCC Write Inhibit

During VCC power-up or power-down, the EN20F080 locks out write cycles to protect against any

unintentional writes. If VCC < VLOK, the command register is disabled and all internal program or

erase circuits are disabled. Under this condition, the device will reset to the READ mode. Subsequent

writes will be ignored until VCC > VLKO.

Write “Noise” Pulse Protection

Noise pulses less than 5ns on OE , CE or WE will neither initiate a write cycle nor change the

command register.

Logical Inhibit

If OE = VIL or CE =VIH, or WE=VIH, writing is inhibited. To initiate a write cycle, CE and W E must be

a logical “zero” and OE must be a logical “one”.

Sector Protection

When the device is shipped, all Sectors are unprotected. Each Sector can be separately protected

against data changes. Using hardware protection circuitry enabled at user’s site with external

programming equipment, both program and erase operations may be disabled for any specified

Sector or combination of Sectors. Verification of write protection for a specific Sector can be

achieved with an Auto Select ID read command at location 02h where the address bits A17 - A13

select the defined Sector (see Table 5). A logical “1” at DQ0 means a protected Sector and a logical

“0” means an unprotected Sector.

Sector Unprotect

The Sector Unprotect disables Sector protection in all Sectors in one operation to implement code

changes. It is selected by CE = L, OE = A9 = VID and A6 = A1 = 1 with A0 = 0. Driving W E low will

initiate the Sector Unprotect. To verify the Sector Unprotect is the same as to verify Sector Protect

where a logical “0” at DQ0 means an unprotected Sector for the selected Sector address.

4800 Great America Parkway, Suite 202

15

Santa Clara, CA 95054

Tel: 408-235-8680

Fax: 408-235-8685

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