RX1214B300Y データシートの表示（PDF） - Philips Electronics
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RX1214B300Y Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN microwave power transistor
Product specification
RX1214B300Y
FEATURES
PINNING - SOT439A
• Interdigitated structure provides high emitter efficiency
PIN
• Diffused emitter ballasting resistors providing excellent
1
current sharing and withstanding a high VSWR
2
• Gold metallization realizes very stable characteristics
and excellent lifetime
3
• Multicell geometry improves power sharing and reduces
thermal resistance
• Internal input and output matching networks for an easy
circuit design.
olumns
DESCRIPTION
collector
emitter
base connected to flange
1
c
APPLICATIONS
• Common base class-C wideband amplifiers operating
under pulsed conditions, recommended for L-band
radar applications.
3
2
Top view
b
3
e
MAM045
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT439A metal ceramic flange package with the base
connected to the flange.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance at Tmb ≤ 25 °C in a common base class-C wideband amplifier.
MODE OF OPERATION
f
(GHz)
VCC
(V)
PL
(W)
GP
(dB)
Class-C
1.2 to 1.4
50
≥250
≥7
tp = 150 µs; δ = 5 %
ηC
Zi; ZL
(%)
(Ω)
≥35
see Fig 6
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19
2
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