RX1214B300Y データシートの表示（PDF） - Philips Electronics
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RX1214B300Y Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN microwave power transistor
Product specification
RX1214B300Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCES
VEBO
IC
Ptot
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
Tsld
soldering temperature
CONDITIONS
MIN.
open emitter
−
RBE = 0 Ω
−
open collector
−
tp ≤ 150 µs; δ = 5 %
−
tp ≤ 150 µs; δ = 5 %;
−
Tmb = 75 °C
−65
−
at 0.2 mm from case; t ≤ 10 s −
MAX.
65
60
3
21
570
UNIT
V
V
V
A
W
+200
°C
200
°C
235
°C
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Ptot
(W)
600
MGD976
400
200
0
−50
0
50
100
150
200
Tmb (°C)
tp = 150 µs; δ = 5 %
Fig.2 Power derating curve.
1997 Feb 19
3
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