SW50N06V2 データシートの表示（PDF） - Xian Semipower Electronic Technology Co., Ltd.
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SW50N06V2 Datasheet PDF : 6 Pages
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SW50N06V2
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Off characteristics
BVDSS Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS Breakdown voltage temperature
/ ΔTJ coefficient
ID=250uA, referenced to 25oC
IDSS Drain to source leakage current
VDS=60V, VGS=0V
VDS=48V, TC=125oC
Gate to source leakage current, forward
IGSS
Gate to source leakage current, reverse
On characteristics
VGS(TH) Gate threshold voltage
RDS(ON) Drain to source on state resistance
Gfs
Forward transconductance
Dynamic characteristics
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
td(on) Turn on delay time
tr
Rising time
td(off) Turn off delay time
tf
Fall time
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
VDS=VGS, ID=250uA
VGS=10V, ID=25A
VGS=4.5V, ID=25A
VDS=10V, ID=25A
VGS=0V, VDS=25V, f=1MHz
VDS=30V, ID=50A, RG=25Ω,
VGS=10V
(note 4,5)
VDS=50V, VGS=10V, ID=50A
(note 4,5)
Min.
60
1
Typ. Max. Unit
0.04
V
V/oC
1 uA
50 uA
100 nA
-100 nA
3
V
11
14 mΩ
14
17 mΩ
80
S
2570
175
pF
170
24
100
ns
166
66
59
9
nC
22
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS
Continuous source current
ISM
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
VSD Diode forward voltage drop.
IS=50A, VGS=0V
trr
Reverse recovery time
Qrr
Reverse recovery charge
IS=50A, VGS=0V,
dIF/dt=100A/us
※. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2.
L =0.18mH, IAS =30A, VDD=50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 50A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
5. Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Min.
Typ.
18
8.7
Max. Unit
50 A
200 A
1.4 V
ns
nC
Sep. 2016. Rev. 2.0 2/6
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