P3C1256-12TI データシートの表示（PDF） - Semiconductor Corporation
部品番号
コンポーネント説明
メーカー
P3C1256-12TI Datasheet PDF : 10 Pages
| |||
CAPACITANCES(4)
(VCC = 5.0V, TA = 25°C, f = 1.0 MHz)
Symbol
Parameter
CIN
COUT
Input Capacitance
Output Capacitance
Test Conditions
VIN = 0V
VOUT = 0V
Max
10
10
P3C1256
Unit
pF
pF
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
ICC
Parameter
Dynamic Operating Current
Temperature
Range
Test
Conditions
-12
-15
-20
-25
Unit
Commercial
Industrial
*
110 100 95 90 mA
*
N/A 115 110 105 mA
*Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate.
The device is continuously enabled for writing, i.e., CE, and WE ≤ VIL (max), OE is high. Switching inputs are 0V
and 3V.
AC ELECTRICAL CHARACTERISTICS - READ CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
Symbol
Parameter
-12
Min Max
-15
Min Max
-20
Min Max
-25
Min Max
Unit
tRC
Read Cycle Time
12
15
20
25
ns
tAA
Address Access Time
12
15
20
25
ns
tAC
Chip Enable Access
Time
12
15
20
25
ns
tOH
Output Hold from
Address Change
2
2
2
2
ns
tLZ
Chip Enable to
Output in Low Z
2
2
2
2
ns
tHZ
Chip Disable to
Output in High Z
7
8
9
10
ns
tOE
Output Enable Low
to Data Valid
7
9
11
12
ns
tOLZ
Output Enable Low to
Low Z
0
0
0
0
ns
tOHZ
Output Enable High
to High Z
6
7
9
10
ns
tPU
Chip Enable to Power
Up Time
0
0
0
0
ns
tPD
Chip Disable to
Power Down Time
12
15
20
20
ns
Document # SRAM122 REV B
Page 3 of 10
Share Link: 