PSMN005-55P データシートの表示（PDF） - Philips Electronics

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PSMN005-55P

N-channel logic level TrenchMOS(TM) transistor

Philips Electronics 

Philips Semiconductors

N-channel logic level TrenchMOS(TM) transistor

Product specification

PSMN005-55B;

PSMN005-55P

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

IS

Continuous source current

(body diode)

ISM

Pulsed source current (body

diode)

VSD

Diode forward voltage

IF = 25 A; VGS = 0 V

IF = 75 A; VGS = 0 V

trr

Reverse recovery time

IF = 20 A; -dIF/dt = 100 A/µs;

Qrr

Reverse recovery charge VGS = 0 V; VR = 30 V

MIN. TYP. MAX. UNIT

-

- 75 A

-

- 240 A

- 0.85 1.2 V

- 1.1 -

V

- 80 - ns

- 0.2 - µC

October 1999

4

Rev 1.200

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