DTD123Y(2005) データシートの表示（PDF） - Unisonic Technologies

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DTD123Y
(Rev.:2005)

DIGITAL TRANSISTORS (BUILT-IN RESISTORS)

Unisonic Technologies 

DTD123Y

NPN EPITAXIAL SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATING (Ta=25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply voltage

VCC

50

V

Input voltage

VIN

-5 ~ +12

V

Output current

IC

500

mA

Power dissipation

Junction Temperature

Storage Temperature

PD

200

mW

TJ

+150

℃

TSTG

-55 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25℃)

PARAMETER

SYMBOL

TEST CONDITIONS

Input Voltage

VIN(OFF) VCC=5V, IOUT=100µA

VIN(ON) VOUT=0.3V, IOUT=20mA

Output Voltage

VOUT(ON) IO/II=50mA/2.5mA

Input Current

IIN

VIN=5V

Output Current

IO(OFF) VCC=50V, VIN=0V

DC Current Gain

GI

VOUT=5V, IOUT=50mA

Input Resistance

R1

Resistance Ratio

R2/R1

Transition Frequency

fT

VCE=10V, IE= −50mA, f=100MHz *

* Transition frequency of the device

MIN TYP MAX UNIT

0.3

V

2

0.1

0.3

V

3.6 mA

0.5

µA

56

1.54 2.2 2.86 KΩ

3.6

4.5

5.5

200

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R206-087,A

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