R6504KNX データシートの表示（PDF） - Inchange Semiconductor
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R6504KNX Datasheet PDF : 2 Pages
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isc N-Channel MOSFET Transistor
R6504KNX
FEATURES
·Drain Current –ID= 4.0A@ TC=25℃
·Drain Source Voltage-
: VDSS=650V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.05Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
4.0
A
IDM
Drain Current-Single Pluse
12
A
PD
Total Dissipation @TC=25℃
40
W
TJ
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
3.13 ℃/W
isc website：www.iscsemi.com
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