R6504KNX データシートの表示（PDF） - Inchange Semiconductor
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R6504KNX Datasheet PDF : 2 Pages
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isc N-Channel MOSFET Transistor
R6504KNX
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=130uA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=1.5A
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VGS= ±20V;VDS= 0
VDS= 650V; VGS= 0
VDS= 650V; VGS= 0@TJ=125℃
IS= 4A; VGS= 0
MIN MAX UNIT
650
V
3
5
V
1.05
Ω
±100 nA
100
1000
μA
1.5
V
NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
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