DTA115GKA データシートの表示（PDF） - ROHM Semiconductor
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DTA115GKA Datasheet PDF : 3 Pages
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Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
∗ Transition frequency of the device.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
DTA115GUA / DTA115GKA
Min. Typ. Max. Unit
Conditions
−50
−
−
V
IC= −50µA
−50
−
−
V
IC= −1mA
−5
−
−
V
IE= −72µA
−
−
−0.5
µA VCB= −50V
−30
−
−58
µA VEB= −4V
−
−
−0.3
V
IC= −5mA, IB= −0.25mA
82
−
−
−
IC= −5mA, VCE= −5V
70
100
130
kΩ
−
−
250
−
MHz VCE= −10V, IE=5mA, f=100MHz ∗
zElectrical characteristics curves
1k
VCE=5V
500
200
100
50
20
10
5
Ta=25°C
Ta=100°C
Ta= −40°C
2
1
10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. Collector current
1
IC/IB=20/1
500m
200m
100m
50m
20m
10m
5m
Ta=100°C
Ta=25°C
Ta= −40°C
2m
1m
10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
Rev.A
2/2
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