BC847S(1998) データシートの表示（PDF） - Fairchild Semiconductor
部品番号
コンポーネント説明
メーカー
BC847S Datasheet PDF : 8 Pages
| |||
Typical Characteristics
NPN Multi-Chip General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
1
- 40 °C
0.8
0.6
0.4
0.2
0.1
25 °C
125 °C
β = 10
1
10
100
I C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
10
VCB = 45V
1
0.1
25
50
75
100
125
150
TA - AMBIE NT TEMP ERATURE (°C)
Contours of Constant Gain
Bandwidth Product (fT )
10
7
175 MHz
5
3
150 MHz
2
125 MHz
100 MHz
75 MHz
1
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0.1
- 40 °C
25 °C
125 °C
V CE = 5.0 V
1
10
40
I C - COLLECTOR CURRENT (mA)
Input and Output Capacitance
vs Reverse Bias Voltage
5
f = 1.0 MHz
4
3
C te
2
1
4
C ob
0
0
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
Normalized Collect or-Cutoff Current
vs Ambient Temperature
1000
100
10
1
25
50
75
100
125
150
TA - AMBIE NT TEMP ERATURE ( °C)
Share Link: 