MOSFET – Power,
N-Channel, SUPERFET) III,
Easy Drive
650 V, 75 A, 29 mW
FCH029N65S3
Description
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET
Easy drive series helps manage EMI issues and allows for easier
design implementation.
Features
• 700 V @ TJ = 150°C
• Typ. RDS(on) = 23.7 mW
• Ultra Low Gate Charge (Typ. Qg = 201 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 1615 pF)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Telecom / Server Power Supplies
• Industrial Power Supplies
• UPS / Solar
www.onsemi.com
VDSS
650 V
RDS(ON) MAX
29 mW @ 10 V
D
ID MAX
75 A
G
S
POWER MOSFET
G DS
TO−247−3LD
CASE 340CX
MARKING DIAGRAM
© Semiconductor Components Industries, LLC, 2020
June, 2020 − Rev. 0
$Y&Z&3&K
FCH
029N65S3
$Y
&Z
&3
&K
FCH029N65S3
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
FCH029N65S3/D