KF7N65P(2011) データシートの表示（PDF） - KEC
部品番号
コンポーネント説明
メーカー
KF7N65P Datasheet PDF : 7 Pages
| |||
SEMICONDUCTOR
TECHNICAL DATA
KF7N65P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
·VDSS=650V, ID=7A
·Drain-Source ON Resistance :
RDS(ON)(Max)=1.2Ω @VGS=10V
·Qg(typ.)= 24nC
MAXIMUM RATING (Tc=25℃)
CHARACTERISTIC
RATING
SYMBOL
KF7N65P KF7N65F
Drain-Source Voltage
VDSS
650
Gate-Source Voltage
Drain Current
@TC=25℃
@TC=100℃
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25℃
Derate above 25℃
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
±30
7
7*
4.2
4.2*
18
18*
212
1.6
4.5
160
52
1.28
0.42
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55～150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
0.78
2.4
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
62.5
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/℃
℃
℃
℃/W
℃/W
KF7N65P
A
E
I
O
C
F
G
B
Q
K
P
M
L
J
D
NN
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A
9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D
0.8 +_ 0.1
E
3.6 +_ 0.2
F
2.8 +_ 0.1
G
3.7
H 0.5+0.1/-0.05
I
1.5
J 13.08 +_ 0.3
K
1.46
L
1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O
4.5 +_ 0.2
P
2.4 +_ 0.2
Q
9.2 +_ 0.2
TO-220AB
KF7N65F
A
C
E
L
M
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E
3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q
4.7 +_ 0.2
R 2.76 +_ 0.2
PIN CONNECTION
D
TO-220IS (1)
G
S
2011. 1. 25
Revision No : 0
1/7
Share Link: 