KDB2572 データシートの表示（PDF） - KEXIN Industrial

部品番号

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KDB2572

N-Channel PowerTrench MOSFET

KEXIN Industrial 

SMD Type

KDB2572(FDB2572)

Electrical Characteristics Ta = 25

Parameter

Drain to source breakdown voltage

Symbol

VDSS

Drain cut-off current

IDSS

Gate leakage current

Gate threshold voltage

IGSS

VGS(th)

Drain to source on-state resistance

RDS(on)

Input capacitance

Output capacitance

Reverse transfer capacitance

Total Gate Charge at 10V

Threshold Gate Charge

Gate to Source Gate Charge

Gate Charge Threshold to Plateau

Gate to Drain "Miller" Charge

Turn-On Time

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-Off Time

Source to Drain Diode Voltage

Reverse Recovery Time

Reverse Recovered Charge

Ciss

Coss

Crss

Qg(TOT)

Qg(TH)

Qgs

Qgs2

Qgd

tON

td(ON)

tr

td(OFF)

tf

tOFF

VSD

trr

QRR

Testconditons

ID=250ìA VGS=0V

VDS=120V,VGS=0

VDS=120V,VGS=0,TC=150

VGS= 20V

VDS = VGS, ID = 250ìA

VGS=10V,ID=9A

VGS=6V,ID=4A

VGS=10V,ID=9A,TC=175

VDS=25V,VGS=0,f=1MHZ

VGS = 0V to 10V

VGS = 0V to 2V

VDS = 75 V, ID = 9A,Ig=1.0mA

VDD = 75 V, ID = 9 A,

VGS = 10 V, RGEN = 11

ISD=9A

ISD=4A

ISD = 9A, dISD/dt =100A/ìs

ISD = 9A, dISD/dt =100A/ìs

MOSFET

Min Typ Max Unit

150

V

1

A

250

A

100 nA

2.0

4.0 V

0.045 0.054

0.050 0.075 Ù

0.126 0.146

1770

pF

183

pF

40

pF

26 34 nC

3.3 4.3 nC

8

nC

5

nC

6

nC

36 ns

11

ns

14

ns

31

ns

14

ns

66 ns

1.25 V

1.0 V

74 ns

169 nC

2 www.kexin.com.cn

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