BT134-600G データシートの表示（PDF） - NXP Semiconductors.

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BT134-600G

4Q Triac

NXP Semiconductors. 

BT134-600G

4Q Triac

21 November 2013

Product data sheet

1. General description

Planar passivated four quadrant triac in a SOT82 plastic package intended for use in

general purpose bidirectional switching and phase control applications.

2. Features and benefits

• Compact package

• High blocking voltage capability

• Least sensitive gate for highest noise immunity

• Planar passivated for voltage ruggedness and reliability

• Triggering in all four quadrants

3. Applications

• General purpose low power motor control

• Home appliances

• Industrial process control

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

VDRM

repetitive peak off-

state voltage

ITSM

non-repetitive peak on- full sine wave; Tj(init) = 25 °C;

state current

tp = 20 ms; Fig. 4; Fig. 5

IT(RMS)

RMS on-state current full sine wave; Tmb ≤ 107 °C; Fig. 1;

Fig. 2; Fig. 3

Static characteristics

IGT

gate trigger current

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7

VD = 12 V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 7

VD = 12 V; IT = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 7

Min Typ Max Unit

-

-

600 V

-

-

25

A

-

-

4

A

-

5

50

mA

-

8

50

mA

-

11

50

mA

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