ISCD230 データシートの表示（PDF） - Inchange Semiconductor
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ISCD230 Datasheet PDF : 2 Pages
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isc Epitaxial Silicon Avalanche photodiode
INCHANGE Semiconductor
ISCD230
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
VBR
Breakdown voltage
Diameter
Gain@800nm
Responsivity@800nm
Temperature coefficient(constant gain)
ID
Dark Current
Noise Current:f=10kHz,ΔF=1.0Khz
Capacitance
TR
Rise time
MIN
TYP
160
0.23
100
50
0.6
10
0.2
1.5
<0.3
MAX
200
UNIT
V
mm
A/W
V/℃
nA
pA/VHz
pF
nsec
NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
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