AO4800-HF データシートの表示（PDF） - KEXIN Industrial

部品番号

コンポーネント説明

メーカー

AO4800-HF

Dual N-Channel MOSFET

KEXIN Industrial 

SMD Type

MOSFET

Dual N-Channel MOSFET

AO4800-HF (KO4800-HF)

■ Electrical Characteristics Ta = 25℃

Parameter

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

Gate Threshold Voltage

Static Drain-Source On-Resistance

On State Drain Current

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Maximum Body-Diode Continuous Current

Diode Forward Voltage

Symbol

VDSS

IDSS

IGSS

VGS(th)

RDS(On)

ID(ON)

gFS

Ciss

Coss

Crss

Rg

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

trr

Qrr

IS

VSD

Test Conditions

ID=250μA, VGS=0V

VDS=30V, VGS=0V

VDS=30V, VGS=0V, TJ=55℃

VDS=0V, VGS=±12V

VDS=VGS , ID=250uA

VGS=10V, ID=6.9A

VGS=10V, ID=6.9A TJ=125℃

VGS=4.5V, ID=6A

VGS=2.5V, ID=5A

VGS=4.5V, VDS=5V

VDS=5V, ID=5A

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

VGS=4.5V, VDS=15V, ID=6.9A

VGS=10V,VDS=15V,RL=2.2Ω,

RGEN=3Ω

IF= 5A, dI/dt= 100A/us

IS=1A,VGS=0V

Min Typ Max Unit

30

V

1

uA

5

±100 nA

0.7

1.5 V

27

40

mΩ

32

50

25

A

33

S

630

75

pF

50

1.5

4.5 Ω

6

7

1.3

nC

1.8

3

2.5

25

ns

4

8.5

2.6

nC

2.5 A

1

V

Note.The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.

■ Marking

Marking

4800

KA**** F

2 www.kexin.com.cn

Share Link: