BUX39 データシートの表示（PDF） - New Jersey Semiconductor
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BUX39 Datasheet PDF : 2 Pages
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BUX39
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Collector - Emitter Sustaining
VcEO(sus)' Voltage
lc = 0.2A
L = 25mH
IB = °
90
Emitter - Base
V(BR)EBO Breakdown Voltage
IC = Q
IE = 50mA
7
'CEO
Collector Cut-off Current
VCE = 70V
VCE = 120V
VBE = -1.5V
'CEX
Collector Cut-off Current
VCE = 120V
TC = 125°C
VBE = -1.5V
'EBO
VCE(satr
Emitter Cut-off Current
Collector - Emitter
Saturation Voltage
lc = 0
IC = 12A
Vj
lc = 20A
VBE = -5V
IDB = 1.2A
IB=2.5A
VBE(sat)'
Base - Emitter
Saturation Voltage
lc = 20A
IB= 2.5A
hFE.
's/b
DC Current Gain
Second Breakdown
Collector Current
IwC = 12A
lc = 20A
VCE = 45V
VCE = 30V
VrF =4V
15
\~rl-
8
VCE = 4V
t = 1s
1
t= 1s
4
fT
Transition Frequency
1ON
Turn-On Time
IC = 1A
l\cs = 20A
IB = 2.5A
VCE = 15V
8
V c \Cj\j =30V
ts
Storage Time
tf
Fall Time
lc = 20A
Vcc = 30V
IB1 = -IB2 = 2.5A
Typ. Max. Unit
V
0.7
1.25
2.1
0.8
0.55
0.15
V
1
mA
1
mA
5
1
mA
1.2
V
1.6
2.5
V
45
~~
A
MHz
1.5
IIS
1
0.3
THERMAL CHARACTERISTICS
Thermal Resistance Junction to Case
1.46 °C/W
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