2SB1386PT データシートの表示（PDF） - CHENMKO CO., LTD.

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2SB1386PT

SMALL FLAT PNP Epitaxial Transistor

CHENMKO CO., LTD. 

RATING CHARACTERISTIC CURVES ( 2SB1386PT )

CHARACTERISTICS ( At TA = 25oC unless otherwise noted )

PARAMETERS

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector Cut-off Current

Emitter Cut-off Current

CONDITION

IC=-50uA

IC=-1mA

IE=-50uA

IE=0; VCB=-200V

IC=0; VEB=-5V

DC Current Gain

VCE=-2V; Note 1

IC=-0.5A

SYMBOL

BVCBO

BVCEO

BVEBO

ICBO

ICEO

hFE

Collector-Emitter Saturation Voltage

Output Capacitance

Transition Frequency

IC=-4A; IB=-0.1A

IE=ie=0; VCB=-20V;

f=1MHz

IE=-0.05A; VCE=-6.0V;

f=100MHz

Note :

1. hFE(2) Classification P: 82 to 180, Q: 120 to 270, R: 180 to 390.

VCEsat

CC

fT

MIN.

-30

-20

-6

-

-

82

-

-

-

TYPE

-

-

-

-

-

-

-0.35

60

120

MAX.

-

-

-

-0.5

-0.5

390

UNITS

Volts

Volts

Volts

uA

uA

-1.0

Volts

-

pF

-

MHz

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