IXBK64N250 データシートの表示（PDF） - IXYS CORPORATION
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IXBK64N250 Datasheet PDF : 6 Pages
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IXBK64N250
IXBX64N250
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 7. Transconductance
TJ = - 40ºC
25ºC
125ºC
20
40
60
80
100
120
140
IC - Amperes
Fig. 8. Forward Voltage Drop of Intrinsic Diode
200
180
160
140
120
TJ = 25ºC
100
TJ = 125ºC
80
60
40
20
0
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
VF - Volts
16
14
VCE = 600V
I C = 64A
12
I G = 10mA
10
Fig. 9. Gate Charge
100,000
10,000
f = 1 MHz
Fig. 10. Capacitance
Cies
8
1,000
Coes
6
4
100
Cres
2
0
0
50
100 150 200 250 300 350 400 450
QG - NanoCoulombs
10
0
5
10
15
20
25
30
35
40
VCE - Volts
Fig. 11. Reverse-Bias Safe Operating Area
180
160
Fig. 12. Forward-Bias Safe Operating Area
1000
VCE(sat) Limit
140
120
100
100
80
60
10
40
TJ = 125ºC
RG = 1Ω
20
dv / dt < 10V / ns
0
1
250 500 750 1000 1250 1500 1750 2000 2250 2500
1
VCE - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
TJ = 150ºC
TC = 25ºC
Single Pulse
10
100
VCE - Volts
25µs
100µs
1ms
1,000
10,000
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