NESG2101M16 データシートの表示（PDF） - NEC => Renesas Technology
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NESG2101M16 Datasheet PDF : 13 Pages
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NESG2101M16
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
DC Characteristics
Collector Cut-off Current
ICBO VCB = 5 V, IE = 0 mA
Emitter Cut-off Current
DC Current Gain
IEBO VEB = 1 V, IC = 0 mA
h Note 1
FE
VCE = 2 V, IC = 15 mA
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
Associated Gain (1)
Associated Gain (2)
Reverse Transfer Capacitance
Maximum Stable Power Gain
fT VCE = 3 V, IC = 50 mA, f = 2 GHz
⏐S21e⏐2 VCE = 3 V, IC = 50 mA, f = 2 GHz
NF VCE = 2 V, IC = 10 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
NF VCE = 2 V, IC = 7 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
Ga VCE = 2 V, IC = 10 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
Ga VCE = 2 V, IC = 7 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
C Note 2
re
VCB = 2 V, IE = 0 mA, f = 1 MHz
MSG Note 3 VCE = 3 V, IC = 50 mA, f = 2 GHz
Gain 1 dB Compression Output Power
PO (1 dB) VCE = 3.6 V, IC (set) = 10 mA (RF OFF),
f = 2 GHz, ZS = ZSopt, ZL = ZLopt
Linear Gain
GL VCE = 3.6 V, IC = 10 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
MIN.
−
−
130
14
11.5
−
−
11.0
−
−
14.5
−
−
TYP.
−
−
190
17
13.5
0.9
0.6
13.0
19.0
0.4
17.0
21
15
MAX.
100
100
260
−
−
1.2
−
−
−
0.5
−
−
−
Unit
nA
nA
−
GHz
dB
dB
dB
dB
dB
pF
dB
dBm
dBm
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MSG = S21
S12
hFE CLASSIFICATION
<R>
Rank
Marking
hFE Value
FB/YFB
zH
130 to 260
2
Data Sheet PU10395EJ03V0DS
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