NESG2101M16 データシートの表示（PDF） - NEC => Renesas Technology

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NESG2101M16

NPN SILICON GERMANIUM RF TRANSISTOR

NEC => Renesas Technology 

INSERTION POWER GAIN, MSG

vs. COLLECTOR CURRENT

30

VCE = 3 V,

f = 1 GHz

25

20

MSG

15

10

|S21e|2

5

0

1

10

100

Collector Current IC (mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

30

VCE = 3 V,

f = 2 GHz

25

20

MSG

MAG

15

10

5

|S21e|2

0

1

10

100

Collector Current IC (mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

20

VCE = 3 V,

f = 3 GHz

15

MSG

MAG

10

5

|S21e|2

0

1

10

100

Collector Current IC (mA)

Remark The graphs indicate nominal characteristics.

NESG2101M16

INSERTION POWER GAIN, MSG

vs. COLLECTOR CURRENT

30

VCE = 4 V,

f = 1 GHz

25

MSG

20

15

10

|S21e|2

5

0

1

10

100

Collector Current IC (mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

30

VCE = 4 V,

f = 2 GHz

25

20

MSG

MAG

15

10

5

|S21e|2

0

1

10

100

Collector Current IC (mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

20

VCE = 4 V,

f = 3 GHz

15

MSG

MAG

10

5

|S21e|2

0

1

10

100

Collector Current IC (mA)

8

Data Sheet PU10395EJ03V0DS

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