CHT1198PT データシートの表示（PDF） - CHENMKO CO., LTD.

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CHT1198PT

SURFACE MOUNT PNP Switching Transistor

CHENMKO CO., LTD. 

RATING CHARACTERISTIC CURVES ( CHT1198PT )

ELECTRICAL CHARACTERISTICS

Tamb = 25 °C unless otherwise noted.

SYMBOL

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE

VCEsat

Cc

fT

PARAMETER

CONDITIONS

collector-base breakdown voltage IE = 0; IC =-50 uA

collector-emitter breakdown voltage IB = 0; IC =-2 mA

emitter-base breakdown voltage IC = 0; IE =-50 uA

collector cut-off current

IE = 0; VCB = - 50 V

emitter cut-off current

IC = 0; VEB = - 4 V

DC current gain

VCE = -3V; note 1

IC = -100 mA

collector-emitter saturation

voltage

IC = -500 mA, IB=-50 mA

collector capacitance

transition frequency

IE = ie = 0; VCB =-10 V ; f = 1 MHz

IE = 50 mA; VCE = - 1 0 V ;

f = 100 MHz

MIN.

-80

-80

-5

−

−

120

−

−

−

MAX.

−

−

−

-500

-500

390

-500

11Typ.

180Typ.

UNIT

V

V

V

nA

nA

mV

pF

MHz

Note

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

2. hFE: Q Gade: 120~270

R Gade: 180~390

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