BLF276 データシートの表示（PDF） - Philips Electronics
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BLF276 Datasheet PDF : 13 Pages
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Philips Semiconductors
VHF power MOS transistor
Product specification
BLF276
FEATURES
• High power gain
• Easy power control
• Good thermal stability
PIN CONFIGURATION
page
1
2
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range. The transistor delivers an
output power of 100 W in class-B
operation at a supply voltage of 50 V.
The transistor is encapsulated in a
6-lead, SOT119 pill-package
envelope, with a ceramic cap.
PINNING - SOT119D3
PIN
DESCRIPTION
1 source
2 source
3 gate
4 drain
5 source
6 source
3
5
Top view
4
6
MSA308
d
g
MBB072 s
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
GP
(W)
(dB)
ηD
(%)
CW, class-B
225
50
108
50
100
≥ 13
≥ 50
100
≥ 18
≥ 60
December 1997
2
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