B80NF10(2007) データシートの表示（PDF） - STMicroelectronics

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B80NF10
(Rev.:2007)

N-channel 100V - 0.012Ω - 80A - TO-220 / D2PAK Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STP80NF10 - STB80NF10

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Drain-source

V(BR)DSS breakdown voltage

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage

drain current (VGS = 0)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

Test conditions

Min. Typ. Max. Unit

ID = 250µA, VGS = 0

100

V

VDS = Max rating

VDS = Max rating @125°C

1 µA

10 µA

VGS = ±20V

±100 nA

VDS = VGS, ID = 250µA

2

3

4

V

VGS = 10V, ID = 40A

0.012 0.015 Ω

Table 4. Dynamic

Symbol

Parameter

Test conditions

gfs (1)

Ciss

Coss

Crss

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V , ID =40 A

VDS = 25V, f = 1 MHz,

VGS = 0

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 50V, ID = 80A,

VGS = 10V

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %

Min.

Typ.

50

Max. Unit

S

5500

pF

700

pF

175

pF

135 182 nC

23

nC

51.3

nC

4/14

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