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STP55NF06 データシートの表示(PDF) - STMicroelectronics

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STP55NF06 Datasheet PDF : 12 Pages
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STB55NF06 STB55NF06-1
STP55NF06 STP55NF06FP
N-CHANNEL 60V - 0.015 - 50A TO-220/TO-220FP/I²PAK/D²PAK
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STP55NF06
STB55NF06-1
STB55NF06
STP55NF06FP
60 V
60 V
60 V
60 V
<0.018
<0.018
<0.018
<0.018
50 A
50 A
50 A
50 A(*)
s TYPICAL RDS(on) = 0.015
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
s THROUGH-HOLE I²PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX “-1")
DESCRIPTION
This Power MOSFET is the latest development of ST-
Microelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufactur-
ing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE
TO-220FP
3
2
1
TO-220
3
2
1
123
I²PAK
TO-262
(Suffix “-1”)
3
1
D²PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM(•)
Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Operating Junction Temperature
(•) Pulse width limited by safe operating area
(*)Refer to soa for the max allowable current value on FP-type due
to Rth value
March 2003
.
Value
STP_B55NF06(-1)
STP55NF06FP
60
60
± 20
50
50(*)
35
35(*)
200
200(*)
110
30
0.73
0.2
7
350
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD 50A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 25A, VDD= 30V
1/12

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