2N7000G(2011) データシートの表示（PDF） - ON Semiconductor
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2N7000G Datasheet PDF : 4 Pages
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2N7000G
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0, ID = 10 mAdc)
V(BR)DSS
60
−
Vdc
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125°C)
IDSS
−
1.0
mAdc
−
1.0
mAdc
Gate−Body Leakage Current, Forward
(VGSF = 15 Vdc, VDS = 0)
IGSSF
−
−10
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Static Drain−Source On−Resistance
(VDS = VGS, ID = 1.0 mAdc)
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
VGS(th)
rDS(on)
0.8
3.0
Vdc
W
−
5.0
−
6.0
Drain−Source On−Voltage
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
VDS(on)
Vdc
−
2.5
−
0.45
On−State Drain Current
Forward Transconductance
(VGS = 4.5 Vdc, VDS = 10 Vdc)
(VDS = 10 Vdc, ID = 200 mAdc)
Id(on)
gfs
75
−
mAdc
100
−
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Ciss
Coss
Crss
−
60
pF
−
25
−
5.0
SWITCHING CHARACTERISTICS (Note 1)
Turn−On Delay Time
Turn−Off Delay Time
(VDD = 15 V, ID = 500 mA,
RG = 25 W, RL = 30 W, Vgen = 10 V)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ton
−
10
ns
toff
−
10
ORDERING INFORMATION
Device
Package
Shipping†
2N7000G
TO−92
(Pb−Free)
1000 Units / Bulk
2N7000RLRAG
TO−92
(Pb−Free)
2000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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