PBSS4540Z 데이터 시트보기 (PDF) - Philips Electronics
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PBSS4540Z Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN medium power transistor
Preliminary specification
PBSS4540Z
FEATURES
• High current (max. 10 A)
• Low voltage (max. 40 V)
• Low VCEsat.
APPLICATIONS
• Heavy duty battery powered equipment (Automotive,
Telecom and Audio/Video) such as motor and lamp
drivers
• VCEsat critical applications such as the latest low supply
voltage IC applications
• All battery driven equipment to save battery power.
DESCRIPTION
NPN low VCEsat transistor in a SOT223 plastic package.
PNP complement: PBSS5540Z.
MARKING CODE
TYPE NUMBER
PBSS4540Z
MARKING CODE
PB4540
PINNING
PIN
1
2
3
4
base
collector
emitter
collector
DESCRIPTION
handbook, halfpage
4
2, 4
1
3
1
2
3
Top view
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
40
40
6
5
10
2
1.35
+150
150
+150
UNIT
V
V
V
A
A
A
W
°C
°C
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other
mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”.
1999 Aug 04
2
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