PBSS4540Z 데이터 시트보기 (PDF) - Philips Electronics
부품명
상세내역
제조사
PBSS4540Z Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
NPN medium power transistor
Preliminary specification
PBSS4540Z
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient note 1
92
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other
mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
IEBO
hFE
VCEsat
VBEsat
VBEon
Cc
fT
PARAMETER
CONDITIONS
MIN.
collector cut-off current
emitter cut-off current
DC current gain
saturation voltage
saturation voltage
base-emitter turn-on voltage
collector capacitance
transition frequency
IE = 0; VCB = 30 V
−
IE = 0; VCB = 30 V; Tj = 150 °C
−
IC = 0; VEB = 5 V
−
VCE = 2 V
IC = 500 mA
300
IC = 1 A; note 1
300
IC = 2 A; note 1
250
IC = 5 A; note 1
50
IC = 500 mA; IB = 5 mA
−
IC = 1 A; IB = 10 mA
−
IC = 2 A; IB = 200 mA; note 1
−
IC = 5 A; IB = 500 mA; note 1
−
IC = 5 A; IB = 500 mA; note 1
−
IC = 2 A; VCE = 2 V
1.1
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
IC = 500 mA; VCE = 5 V; f = 100 MHz 80
TYP.
−
−
−
500
500
450
150
65
100
130
300
1.1
0.8
60
120
MAX.
100
50
100
−
−
−
−
120
150
170
400
1.3
−
70
−
UNIT
nA
µA
nA
mV
mV
mV
mV
V
V
pF
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Aug 04
3
Share Link: 